SAMSUNG ELECTRONICS INC BYE D MM 7964142 0013215? 37 MBSMGK IRF530/531/532/533 N-CHANNEL IRFP130/131/132/133 POWER MOSFETS FEATURES 10-220 e Lower Ros (on) * Improved inductive ruggedness * Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area * Improved high temperature reliability IRF530/531/532/533 TO-3P PRODUCT SUMMARY Part Number | Vos__| Rosion 'b IRFS30/IRFP130 100V | 0.160 14A IRFP 130/131/132/133 | IRFS31/IRFP131 80V | 0.169 14A IRF532ARFP 132 100V | 0.232 12A [ IRF533/IRFP133 sov | 0.230] 124 MAXIMUM RATINGS Characteristics Symbol IRF 130 RFP IS! IEP 132 IRFP193 | Unit Drain-Source Voltage (1) Voss 100 80 100 80 Vdc Drain-Gate Voltage (Rag=1.0MQ)(1) Vocr 100 80 100 80 Vde Gate-Source Voltage Vas +20 Vde Continuous Drain Current Te =25C Ip 14 14 12 12 Adc Continuous Drain Current Tc=100C lp 10 10 8.3 8.3 Adc Orain CurrentPulsed (3) , lom 56 56 48 48 Adc Gate CurrentPulsed lom +1.6 Adc Single Pulsed Avalanche Energy (4) Eas 69 mJ Avalanche Current las 14 A Total Power Dissipation @ Tc=25C Po 77 Watts Derate above 25C 0.62 w/c eo Tu Ta ~85 0150 c Maximum Lead Temp. for Soldering Th 300 C Purposes, 1/8" from case for 5 seconds Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max. junction temperature (4) L=0.53 mH, Vagm26V, Re=25N, Starting T= 25C ELECTRONICSSAMSUNG ELECTRONICS INC b4YE D MM 7964142 0012158 573 BMSNGK ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise specified) Symbol Characteristic Min | Typ | Max |Units Test Conditions Drain-Source Breakdown Voltage BV IRF530/IRFP130 100} - V_| Ves=0V O88 | IRF532/IRFP132 Ip=250pA IRF531/IRFP131 IRF533/IRFP133 Bo; -) - | Vesith) | Gate Threshold Voltage 2.0} | 4.0 | V_ | Vos=Ves, lo=250pA lags | Gate-Source Leakage Forward | | 100 | nA | Ves=20V lass | Gate-Source Leakage Reverse | |-100) nA | Ves=-20V loss Zero Gate Voltage | | 250 | yA | Vos=Max. Rating, Vas=OV Drain Current | |1000| yA | Vos=Max. Ratingx0O 8, Ves=OV, To=125C On-State Drain-Source Current (2) IRFS530/RFP130 14] _ A Ibe) | IRF S31 /IRFP131 Vps73.2V, Ves=10V IRF532/IRFP 132 12| _ A IRF533/IRFP133 Static Orain-Source On-State Resistance (2) Rosjon) | IRF530/IRFP130 |0.10/0.16] Q | Ves=10V, Ilp=8.3A IRF531/IRFP131 IRF532/IRFP132 IRFS33/IRFP1 33 9-16) 0.23) 9 Qts | Forward Transconductance (2) 117.6] U_ | Vos250V, Ip=8.3A Cis | Input Capacitance |640| pF Coss | Output Capacitance |240} pF | Ves=OV, Vos=25V, f=1.0MHz Cress | Reverse Transfer Capacitance | 72 _ pF t Turn-On Delay Time j;10]; 15 ns to eee Vpp=0.5BVpss. ln=8.3A, Zo=120 tr | Rise Time | 34 | 51 | 18 _| (MOSFET switching times are essentially tao | Turn-Off Delay Time _ | 23 | 35 | ng | independent of operating temperature) tr Fall Time | 24 | 36 ns Total Gate Charge ~ 26 Q% (Gate-Source Plus Gate-Drain) 7 nc Vaes=10V, Ip=14A, Vos=0.8 Max. Rating Qgs_ | Gate-Source Charge 137/55 | nc (Gate charge is essentially independent of operating temperature.) * Qga | Gate-Drain (Miller) Charge _ 7 11 nc THERMAL RESISTANCE Symbol Characteristic IRF 530-3 IRFP130-3 Unit Rthuc Junction-to-Case MAX 162 1.62 K/W Rincs | Case-to-Sink TYP 0.5 0.24 kiw | Mounting surface flat smooth, and greased Rina Junction-to-Ambient MAX 80 40 K/W | Free Air Operation Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ELECTRONICSSAMSUNG ELECTRONICS INC BYE D MM 7964142 0012159 4OT mESNGK IRF 530/531/532/533 N-CHANNEL IRFP130/131/132/133 POWER MOSFETS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min; Typ | Max | Units Test Conditions Continuous Source Current (Body Diode) Is IRF530/IRFP130 -|- 14 A IRF531/IRFP131 Q IRFS32/IRFP132 IRF533/IRFP133 Modified MOSFET symbol o Pulse Source Current(Body Diode)(3} showing the integral G Ism__| IRF530/IRFP130 | | 56 A reverse P-N junction rectifier IRF531/RFP131 IRF532/IRFP132 IRFS33/ARFP133 Diode Forward Voltage (2) Vso | IRF530/IRFP130 |/]25 Vv Tc=28C, Is=14A, Ves=OV {RF531/IRFP131 ||4a}]a IRFS32/RFP132 pen te _ IRF533/IRFP133 ] 7] 23 | Vo | To=26C, Is=12A, Ves=OVv ter Reverse Recovery Time 1120) 250 | ns | T,=25C, tp=14A, dle/dt=100A/pS Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ps, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max junction temperature 24 Te Pulse Test 80us Pulse Test max a ~ w ig w ec a we = a $ 3 = < Zz - 2 12 a 2 5 z oO = 28 z < a 5 6 , s 0 10 20 0 3 6 9 Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vas, GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transfer Characteristics ELECTRONICSSAMSUNG ELECTRONICS INC b4YE D MM 7964442 OOL2LLO 12] MESNGK , IRF530/531/532/533 N-CHANNEL IRFP130/131/132/133 POWER MOSFETS OPERATION IN THIS AREA IS LIMITED BY 10 ys 80yus Pulse Tesi 00 ys Tos 13 150C MAX Riuc=1 67 KW PULSE lp, DRAIN CURRENT (AMPERES) lp, DRAIN CURRENT (AMPERES) 0 04 08 12 16 20 10 2 5 10 20 50 100 200 500 Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Maximum Sate Operating Area ZrnscttWRthsc, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE (PER UNIT) o 01 0=0 to a 1 Duty Factor O= 4 t 002 2 Per Unit Base=Ryc=1 67 Deg CW 3 Ta-Te= Pom Zone (t) 001 105 5 10 2 5 1 2 10" 2 5 10 2 5 1 2 5 10 til SQUARE WAVE PULSE DURATION (SECONDS) . Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration o 80 us Pulse Test gs, TRANSCONODUCTANCE (SIEMENS) lpn, REVERSE DRAIN CURRENT (AMPERES) Ty=150C 9 10 15 20 26 o1 1 1 2 2 3 Ip, DRAIN CURRENT (AMPERES) Vso, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transcounductance Vs. Drain Current Typical SourceDrain Diode Forward Voltage an - ELECTRONICSSAMSUNG EL ECTRONICS INC IRF530/531/532/533 IRFP130/131/132/133 BVoss ORAIN-TO-SOURCE BREAKOOWN VOLTAGE (NORMALIZED) _ = oe ~ a o ~~ a ~-40 C, CAPACITANCE (pF) Rosjon), DRAIN-TO-SOURCE ON RESISTANCE (OHMS) Rosion, DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 0 40 120 Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature 160 Vos f=1 MHz Crss=Cys+Cgd Cds SHORTED Crss=Cod Coss=cds+20sCad_ Cgst+Cad @Cds+Cgd Ves, GATE-TO-SOURCE VOLTAGE (VOLTS) Coss Crss 10 20 30 40 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Capacitance Vs. Drain to Source Voltage 50 MEASURED CURRENT PULSE OF 2 DURATION INITIAL T. (HEATING OF 2 Ous PULSE IS MINIMAL) Ves 10V jo, DRAIN CURRENT (AMPERES) Vos 20 20 30 40 lp, ORAIN CURRENT (AMPERES) Typical On-Resistance Vs. Drain Current 40 50 b4YE D MM 7964142 0012161 O68 MESMNGK N-CHANNEL POWER MOSFETS 25 ix o ~ a os Vos 10 Ty, JUNCTION TEMPERATURE (C) Normalized On-Resistance Vs. Temperature 8 16 24 Qg, TOTAL GATE CHARGE (nC) Typical Gate Charge Vs. Gate-To-Source Voltage 32 40 0 25 125 50 75 100 150 Ta, AMBIENT TEMPERATURE (*C} Maximum Drain Current Vs. Case Temperature an ELECTRONICS 126SAMSUNG ELECTRONICS INC b4YE D MM 796414e OOlelbe TTY BSNGK IRF530/531/532/533 N-CHANNEL IRFP130/131/132/133 POWER MOSFETS 80 70 60 Pp, POWER DISSIPATION (WATTS) o 20 40 80-100 To, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve ELECTRONICS