CNY65Exi
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Rev. 2.7, 07-Sep-2018 1Document Number: 83541
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, ATEX Certified
DESCRIPTION
The CNY65Exi consists of a phototransistor optically
coupled to an infrared-emitting diode in a 4 pin plastic
package. The components are mounted opposite one
another, with a distance between input and output of
> 3.0 mm; meeting the highest of safety requirements.
The CNY65Exi is ATEX certificated for explosive
atmospheres according to the Directive 2014/34/EU
AGENCY APPROVALS
• ATEX :PTB 03 ATEX 2033 U
EN 60079-0 : 2012 + A11 : 2013
EN 60079-11 : 2012
EN 60079-26 : 2015
FEATURES
• ATEX certificate: PTB 03 ATEX 2033 U
www.vishay.com/doc?85361
• Suitable for intrinsic safe circuits for gas and
dust
• Gas safety provision: II (1) G [Ex ia] IIC
• Dust safety provision: II (1) D [Ex ia] IIIC
• Conforms to EN 60079-0: 2012 + A11: 2013
• Qualified for continuously, longterm, or frequently
dangerous explosive environments, zone 0
• Isolation voltage (VISO) of 11 600 Vpeak for 1 minute
• Distance from emitter to detector through insulation
3 mm
• CTR from 50 % to 300 %
• Very low coupling capacity (CK)
- 0.3 pF superior noise immunity between input and
output pins
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Electronics used in potentially explosive gas and dust
environments
- Safety related process automation and instrumentation
- Natural gas metering and flow measurement
- Power and motor switching
- Power supplies, metering, and data acquisition
- Lighting and signaling
- Petrol and grain transport and storage
CA (±)
EC (±)
Top view
16965-1
ORDERING INFORMATION
CNY 6 5 XE x i
PART NUMBER CTR
BIN
PACKAGE OPTION
AGENCY CERTIFIED/PACKAGE CTR (%)
ATEX 50 to 300 100 to 200
DIP-4, HV, high isolation distance CNY65Exi CNY65BExi
DIP-4
15.24 mm
CNY65Exi
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Rev. 2.7, 07-Sep-2018 2Document Number: 83541
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability
Notes
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
(1) Related to standard climate 23/50 DIN 50014
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR5V
Forward current IF75 mA
Forward surge current tp 10 μs IFSM 1.5 A
Power dissipation Pdiss 120 mW
Junction temperature Tj100 °C
OUTPUT
Collector emitter voltage VCEO 32 V
Emitter collector voltage VECO 7V
Collector current IC50 mA
Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA
Power dissipation Pdiss 130 mW
Junction temperature Tj100 °C
COUPLER
Total power dissipation Ptot 250 mW
Ambient temperature range Tamb -55 to +85 °C
Storage temperature range Tstg -55 to +100 °C
Soldering temperature 2 mm from case, t 10 s Tsld 260 °C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF- 1.25 1.6 V
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 32 - - V
Emitter collector voltage IE = 100 μA VECO 7--V
Collector dark current VCE = 20 V, If = 0, E = 0 ICEO - - 200 nA
COUPLER
Isolation resistance VIO = 1 kV,
40 % relative humidity RIO (1) -10
12 -
Collector saturation voltage IF = 10 mA, IC = 1 mA VCEsat --0.3V
Cut-off frequency VCE = 5 V, IF = 10 mA,
RL = 100 fc110 - - kHz
Coupling capacitance f = 1 MHz Ck-0.3-pF
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
IC/IFVCE = 5 V, IF = 10 mA CNY65Exi CTR 50 100 300 %
CNY65BExi CTR 100 - 200 %
CNY65Exi
www.vishay.com Vishay Semiconductors
Rev. 2.7, 07-Sep-2018 3Document Number: 83541
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• According to DIN EN 60747-5-5 (see Fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits
Fig. 1 - Test Circuit, Non-Saturated Operation Fig. 2 - Test Circuit, Saturated Operation
SAFETY AND INSULATION RATINGS
PARAMETER SYMBOL VALUE UNIT
Climatic classification According to IEC 68 part 1 40 / 85 / 21
Pollution degree According to DIN VDE 0109 2
Comparative tracking index Insulation group IIIa CTI 475
Maximum rated withstanding isolation voltage t = 1 min VISO 8200 VRMS
Maximum transient isolation voltage VIOTM 12 000 Vpeak
Maximum repetitive peak isolation voltage VIORM 1450 Vpeak
Isolation resistance
Tamb = 25 °C, VIO = 500 V RIO 1012
Tamb = 100 °C, VIO = 500 V RIO 1011
Tamb = TS, VIO = 500 V RIO 109
Output safety power PSO 250 mW
Input safety current Isi 120 mA
Input safety temperature TS150 °C
Creepage distance 14 mm
Clearance distance 14 mm
Insulation thickness DTI 3 mm
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Delay time VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) td-2.6- μs
Rise time VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) tr-2.4- μs
Fall time VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) tf-2.4- μs
Storage time VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) ts-0.3- μs
Turn-on time VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) ton -5-μs
Turn-off time VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) toff -3-μs
Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k, (see Fig. 2) ton -25-μs
Turn-off time VS = 5 V, IF = 10 mA, RL = 1 k, (see Fig. 2) toff -42.5- μs
Channel I
Channel II
95 10900
R
G
= 50
t
p
t
p
= 50 µs
T= 0.01
+ 5 V
I
C
= 5 mA; adjusted through
input amplitude
I
F
0I
F
50 100
Oscilloscope
R
L
1 M
C
L
20 pF
Channel I
Channel II
95 10843
RG= 50 Ω
tp
tp= 50 µs
T= 0.01
+ 5 V
IC
IF
0
50 Ω1 kΩ
IF= 10 mA
Oscilloscope
RL
≥
CL20 pF
1 MΩ
≤
CNY65Exi
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Rev. 2.7, 07-Sep-2018 4Document Number: 83541
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Switching Times
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 4 - Total Power Dissipation vs. Ambient Temperature
Fig. 5 - Forward Current vs. Forward Voltage
Fig. 6 - Relative Current Transfer Ratio vs.
Ambient Temperature
Fig. 7 - Collector Dark Current vs. Ambient Temperature
tpt
t
0
0
10 %
90 %
100 %
tr
td
ton
tstf
toff
IF
IC
tpPulse duration
tdDelay time
trRise time
ton (= td + tr) Turn-on time
tsStorage time
tfFall time
toff (= ts + tf) Turn-off time
96 11698
10
100
1000
10000
0
50
100
150
200
250
300
020406080100
Axis Title
1st line
2nd line
2nd line
Ptot - Total Power Dissipation (mW)
Tamb - Ambient Temperature (°C)
Phototransistor
IR diode
Coupled device
0.1
1
10
100
1000
0
VF - Forward Voltage (V)
96 11862
IF - Forward Current (mA)
1.6
1.2
0.8
0.4 2.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
-30 -20 -10 0 10 20 30 40 50 60 70 80
Tamb - Ambient Temperature (°C)
96 11911
CTR
rel
- Relative Current Transfer Ratio
VCE = 5 V
IF = 10 mA
1
10
100
1000
0 102030405060708090 100
T
amb
- Ambient Temperature (°C)
96 12000
I
CEO
- Collector Dark Current,
with Open Base (nA)
VCE = 20 V
IF = 0
CNY65Exi
www.vishay.com Vishay Semiconductors
Rev. 2.7, 07-Sep-2018 5Document Number: 83541
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 8 - Collector Current vs. Forward Current
Fig. 9 - Collector Current vs. Collector Emitter Voltage
Fig. 10 - Collector Emitter Saturation Voltage vs.
Collector Current
Fig. 11 - Current Transfer Ratio vs. Forward Current
Fig. 12 - Turn-On / Turn-Off Time vs. Forward Current
Fig. 13 - Turn-On / Turn-Off Time vs. Collector Current
0.1 1 10
0.01
0.1
1
100
IC - Collector Current (mA)
I
F
- Forward Current (mA)
100
95 11012
10
V
CE
= 5 V
0.1 1 10
0.1
1
10
100
V
CE
- Collector Emitter Voltage (V)
100
95 11013
I
C
- Collector Current (mA)
5 mA
2 mA
1 mA
IF = 50 mA
10 mA
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1 10 100
I
C
- Collector Current (mA)
96 11912
V
CEsat
- Collector Emitter
Saturation Voltage (V)
CTR = 50 %
10 %
20 %
0.1 1 10
1
10
100
1000
CTR - Current Transfer Ratio (%)
I
F
- Forward Current (mA)
100
95 11015
VCE = 5 V
01015
0
10
20
30
40
50
IF - Forward Current (mA)
20
95 11017
t
on
/ t
off
- Turn-On / Turn-Off Time (µs)
Saturated operation
V
S
= 5 V
R
L
= 1 kΩ
t
on
5
t
off
04
I
C
- Collector Current (mA)
10
95 11016
Non-saturated
operation
V
S
= 5 V
R
L
= 100 Ω
t
off
t
on
0
5
10
15
20
8
ton / toff - Turn-On / Turn-Off Time (µs)
26
CNY65Exi
www.vishay.com Vishay Semiconductors
Rev. 2.7, 07-Sep-2018 6Document Number: 83541
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS (in millimeters)
PACKAGE MARKING (example of CNY65BExi)
Fig. 14 - Top Marking Fig. 15 - Side Marking
14763
technical drawings
according to DIN
specifications
Weight: ca. 1.40 g
Creepage distance: > 14 mm
Air path: > 14 mm
after mounting on PC board
Cath
AColl
E
0.4
0.5
9.6 ± 0.1
7.62 ± 0.2
6.1 ± 0.1
9.1 ± 0.3
15.24 ± 0.2
17.8 ± 0.1
Drawing-No.: 6.544-5036.01-1
Issue: 2; 10.11.98
Theresienstrasse 2
74072 Heilbronn, Germany
TUBE INFORMATION
TYPE UNITS/TUBE TUBES/BOX UNITS/BOX
CNY65Exi 30 35 1050
CNY65Exi
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Rev. 2.7, 07-Sep-2018 7Document Number: 83541
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 16 - CNY65Exi
SOLDER PROFILES
Fig. 17 - Wave Soldering Double Wave Profile According to
J-STD-020 for Through-Hole Devices
HANDLING AND STORAGE CONDITIONS
ESD level: HBM class 2
Floor life: unlimited
Conditions: Tamb < 30 °C, RH < 85 %
Moisture sensitivity level 1, according to J-STD-020
15914
13.2
3.6
15.3
0.6
8.7
With foamy rubber plugs
Tolerance: ± 0.5 mm
Length: 575 mm ± 2 mm
948626
10
100
1000
10000
0
100
200
300
050 100 150 200 250
Axis Title
1st line
2nd line
2nd line
Temperature (°C)
Time (s)
50
150
250
2 K/s
Second
wave
First wave
5 s
Full line: typical
Dotted lines:
process limits
Lead temperature
235 °C to
260 °C
100 °C to
130 °C
ca. 200 K/s
Forced cooling
ca. 5 K/s
ca. 2 K/s
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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