CNY65Exi www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, ATEX Certified FEATURES Top view A () * ATEX certificate: PTB 03 ATEX 2033 U www.vishay.com/doc?85361 C * Suitable for intrinsic safe circuits for gas and dust * Gas safety provision: II (1) G [Ex ia] IIC * Dust safety provision: II (1) D [Ex ia] IIIC 16965-1 C () * Conforms to EN 60079-0: 2012 + A11: 2013 E * Qualified for continuously, longterm, or frequently dangerous explosive environments, zone 0 DESCRIPTION * Isolation voltage (VISO) of 11 600 Vpeak for 1 minute The CNY65Exi consists of a phototransistor optically coupled to an infrared-emitting diode in a 4 pin plastic package. The components are mounted opposite one another, with a distance between input and output of > 3.0 mm; meeting the highest of safety requirements. * Distance from emitter to detector through insulation 3 mm The CNY65Exi is ATEX certificated for explosive atmospheres according to the Directive 2014/34/EU AGENCY APPROVALS * ATEX :PTB 03 ATEX 2033 U EN 60079-0 : 2012 + A11 : 2013 EN 60079-11 : 2012 EN 60079-26 : 2015 * CTR from 50 % to 300 % * Very low coupling capacity (CK) - 0.3 pF superior noise immunity between input and output pins * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS * Electronics used in potentially explosive gas and dust environments - Safety related process automation and instrumentation - Natural gas metering and flow measurement - Power and motor switching - Power supplies, metering, and data acquisition - Lighting and signaling - Petrol and grain transport and storage ORDERING INFORMATION DIP-4 C N Y PART NUMBER 6 5 X CTR BIN AGENCY CERTIFIED/PACKAGE E x i PACKAGE OPTION 15.24 mm CTR (%) ATEX 50 to 300 100 to 200 DIP-4, HV, high isolation distance CNY65Exi CNY65BExi Rev. 2.7, 07-Sep-2018 Document Number: 83541 1 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY65Exi www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 5 V Forward current IF 75 mA tp 10 s IFSM 1.5 A Pdiss 120 mW Tj 100 C Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V IC 50 mA Forward surge current Power dissipation Junction temperature OUTPUT Collector current Collector peak current tp/T = 0.5, tp 10 ms Power dissipation ICM 100 mA Pdiss 130 mW Tj 100 C Junction temperature COUPLER Total power dissipation Ptot 250 mW Ambient temperature range Tamb -55 to +85 C Tstg -55 to +100 C Tsld 260 C Storage temperature range Soldering temperature 2 mm from case, t 10 s Note * Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF - 1.25 1.6 V INPUT Forward voltage OUTPUT Collector emitter voltage IC = 1 mA VCEO 32 - - V Emitter collector voltage IE = 100 A VECO 7 - - V VCE = 20 V, If = 0, E = 0 ICEO - - 200 nA Isolation resistance VIO = 1 kV, 40 % relative humidity RIO (1) - 1012 - Collector saturation voltage IF = 10 mA, IC = 1 mA VCEsat - - 0.3 V Cut-off frequency VCE = 5 V, IF = 10 mA, RL = 100 fc 110 - - kHz f = 1 MHz Ck - 0.3 - pF Collector dark current COUPLER Coupling capacitance Notes * Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements (1) Related to standard climate 23/50 DIN 50014 CURRENT TRANSFER RATIO (Tamb = 25 C, unless otherwise specified) PARAMETER IC/IF Rev. 2.7, 07-Sep-2018 TEST CONDITION VCE = 5 V, IF = 10 mA PART SYMBOL MIN. TYP. MAX. CNY65Exi CTR 50 100 300 UNIT % CNY65BExi CTR 100 - 200 % Document Number: 83541 2 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY65Exi www.vishay.com Vishay Semiconductors SAFETY AND INSULATION RATINGS PARAMETER SYMBOL Climatic classification According to IEC 68 part 1 Pollution degree According to DIN VDE 0109 Comparative tracking index UNIT 2 Insulation group IIIa Maximum rated withstanding isolation voltage VALUE 40 / 85 / 21 CTI t = 1 min 475 VISO 8200 VRMS Maximum transient isolation voltage VIOTM 12 000 Vpeak Maximum repetitive peak isolation voltage VIORM 1450 Vpeak Tamb = 25 C, VIO = 500 V RIO 1012 Tamb = 100 C, VIO = 500 V RIO 1011 Tamb = TS, VIO = 500 V RIO 109 Isolation resistance Output safety power PSO 250 mW Input safety current Isi 120 mA Input safety temperature TS 150 C 14 mm 14 mm 3 mm Creepage distance Clearance distance Insulation thickness DTI Note * According to DIN EN 60747-5-5 (see Fig. 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits SWITCHING CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Delay time PARAMETER VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) td - 2.6 - s Rise time VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) tr - 2.4 - s Fall time VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) tf - 2.4 - s Storage time VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) ts - 0.3 - s Turn-on time VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) ton - 5 - s Turn-off time VS = 5 V, IC = 5 mA, RL = 100 , (see Fig. 1) toff - 3 - s Turn-on time VS = 5 V, IF = 10 mA, RL = 1 k, (see Fig. 2) ton - 25 - s Turn-off time VS = 5 V, IF = 10 mA, RL = 1 k, (see Fig. 2) toff - 42.5 - s IF 0 IF +5V IF IC = 5 mA; adjusted through input amplitude +5V I F = 10 mA 0 IC R G = 50 tp = 0.01 T RG = 50 tp = 0.01 T tp = 50 s t p = 50 s Channel I Channel I Channel II 50 100 Oscilloscope RL 1 M CL 20 pF 95 10900 Fig. 1 - Test Circuit, Non-Saturated Operation Rev. 2.7, 07-Sep-2018 Channel II 50 Oscilloscope R L 1 M C L 20 pF 1 k 95 10843 Fig. 2 - Test Circuit, Saturated Operation Document Number: 83541 3 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY65Exi www.vishay.com Vishay Semiconductors IF 0 tp IC t 100 % 90 % 10 % 0 tr td tp td tr t on (= td + tr) Pulse duration Delay time Rise time Turn-on time t tf t off ts t on Storage time Fall time Turn-off time ts tf t off (= ts + tf) 96 11698 Fig. 3 - Switching Times Axis Title 10000 300 2nd line Ptot - Total Power Dissipation (mW) Coupled device 250 1000 1st line 2nd line 200 Phototransistor 150 100 100 IR diode 50 10 0 0 20 40 60 80 100 Tamb - Ambient Temperature (C) CTRrel - Relative Current Transfer Ratio TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) VCE = 5 V IF = 10 mA 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -30 -20 -10 0 10 20 30 40 50 60 70 80 96 11911 Fig. 4 - Total Power Dissipation vs. Ambient Temperature Tamb - Ambient Temperature (C) Fig. 6 - Relative Current Transfer Ratio vs. Ambient Temperature 1000 ICEO - Collector Dark Current, with Open Base (nA) 1000 IF - Forward Current (mA) 1.5 100 10 1 VCE = 20 V IF = 0 100 10 1 0.1 0 96 11862 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) Fig. 5 - Forward Current vs. Forward Voltage Rev. 2.7, 07-Sep-2018 0 10 20 30 40 50 60 70 80 90 100 96 12000 Tamb - Ambient Temperature (C) Fig. 7 - Collector Dark Current vs. Ambient Temperature Document Number: 83541 4 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY65Exi www.vishay.com Vishay Semiconductors CTR - Current Transfer Ratio (%) VCE = 5 V 10 1 0.1 1 100 10 IF - Forward Current (mA) 95 11012 Fig. 8 - Collector Current vs. Forward Current IC - Collector Current (mA) 100 IF = 50 mA 10 mA 10 5 mA 2 mA 1 1 mA 0.1 0.1 95 11013 1 100 10 VCE - Collector Emitter Voltage (V) Fig. 9 - Collector Current vs. Collector Emitter Voltage 1.0 VCEsat - Collector Emitter Saturation Voltage (V) 0.9 0.8 0.7 CTR = 50 % 0.6 0.5 0.4 0.3 0.2 20 % 0.1 10 % 0.0 1 96 11912 10 100 IC - Collector Current (mA) Fig. 10 - Collector Emitter Saturation Voltage vs. Collector Current Rev. 2.7, 07-Sep-2018 1000 VCE = 5 V 100 10 1 0.1 1 100 10 IF - Forward Current (mA) 95 11015 Fig. 11 - Current Transfer Ratio vs. Forward Current ton / toff - Turn-On / Turn-Off Time (s) 0.01 0.1 50 toff 40 30 ton 20 Saturated operation VS = 5 V RL = 1 k 10 0 0 5 10 15 20 IF - Forward Current (mA) 95 11017 Fig. 12 - Turn-On / Turn-Off Time vs. Forward Current ton / toff - Turn-On / Turn-Off Time (s) IC - Collector Current (mA) 100 20 Non-saturated operation VS = 5 V RL = 100 ton 15 toff 10 5 0 0 95 11016 2 4 6 8 10 IC - Collector Current (mA) Fig. 13 - Turn-On / Turn-Off Time vs. Collector Current Document Number: 83541 5 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY65Exi www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS (in millimeters) 17.8 0.1 9.1 0.3 6.1 0.1 9.6 0.1 15.24 0.2 7.62 0.2 technical drawings according to DIN specifications 4 0. 5 0. A Coll Cath Weight: ca. 1.40 g Creepage distance: > 14 mm Air path: > 14 mm after mounting on PC board E Drawing-No.: 6.544-5036.01-1 Issue: 2; 10.11.98 14763 CNY65BExi V YWW J 69 II (1) G [Ex ia] IIC II (1) D [Ex ia] IIIC PTB 03 ATEX 2033 U VISHAY PACKAGE MARKING (example of CNY65BExi) Theresienstrasse 2 74072 Heilbronn, Germany Fig. 14 - Top Marking Fig. 15 - Side Marking TUBE INFORMATION TYPE CNY65Exi Rev. 2.7, 07-Sep-2018 UNITS/TUBE TUBES/BOX UNITS/BOX 30 35 1050 Document Number: 83541 6 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 CNY65Exi www.vishay.com Vishay Semiconductors 0.6 15.3 8.7 13.2 With foamy rubber plugs Tolerance: 0.5 mm Length: 575 mm 2 mm 3.6 15914 Fig. 16 - CNY65Exi SOLDER PROFILES HANDLING AND STORAGE CONDITIONS ESD level: HBM class 2 Axis Title 300 10000 5s Floor life: unlimited Lead temperature 200 235 C to 260 C First wave Full line: typical Dotted lines: process limits Second wave Moisture sensitivity level 1, according to J-STD-020 1000 ca. 2 K/s ca. 200 K/s 150 Conditions: Tamb < 30 C, RH < 85 % 1st line 2nd line 2nd line Temperature (C) 250 100 C to 130 C 100 100 2 K/s 50 ca. 5 K/s Forced cooling 10 0 0 50 100 150 200 250 Time (s) 948626 Fig. 17 - Wave Soldering Double Wave Profile According to J-STD-020 for Through-Hole Devices Rev. 2.7, 07-Sep-2018 Document Number: 83541 7 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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