PBSS5350Z - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 2003 Jan 20 2003 May 13

DISCRETE SEMICONDUCTORS

PBSS5350Z

50 V low VCEsat PNP transistor

handbook, halfpage

M3D087

2003 May 13 2

Philips Semiconductors Product speciﬁcation

50 V low VCEsat PNP transistor PBSS5350Z

FEATURES

•Low collector-emitter saturation voltage

•High collector current capability: IC and ICM

•High collector current gain (hFE) at high IC

•Higher efficiency leading to less heat generation

•Reduced PCB area requirements compared to DPAK.

APPLICATIONS

•Power management

– DC/DC converters

– Supply line switching

– Battery charger

– Linear voltage regulation (LDO).

•Peripheral drivers

– Driver in low supply voltage applications, e.g. lamps,

LEDs

– Inductive load driver, e.g. relays, buzzers, motors.

DESCRIPTION

PNP low VCEsat transistor in a SOT223 plastic package.

NPN complement: PBSS4350Z.

MARKING

TYPE NUMBER MARKING CODE

PBSS5350Z PB5350

PINNING

PIN DESCRIPTION

1 base

2 collector

3 emitter

4 collector

handbook, halfpage

123

MAM288

Top view

2, 4

Fig.1 Simplified outline (SOT223) and symbol.

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

VCEO collector-emitter voltage −50 V

ICcollector current (DC) −3A

CM peak collector current −5A

CEsat equivalent on-resistance <150 mΩ

2003 May 13 3

Philips Semiconductors Product speciﬁcation

50 V low VCEsat PNP transistor PBSS5350Z

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.

3. For other mounting conditions see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm.

2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.

3. For other mounting conditions see

“Thermal considerations for SOT223 in the General Part of associated

Handbook”

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −−60 V

VCEO collector-emitter voltage open base −−50 V

VEBO emitter-base voltage open collector −−6V

Ccollector current (DC) −−3A

CM peak collector current −−5A

BM peak base current −−1A

tot total power dissipation Tamb ≤25 °C; notes 1 and 3 −1.35 W

Tamb ≤25 °C; notes 2 and 3 −2W

stg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air; notes 1 and 3 92 K/W

in free air; notes 2 and 3 62.5 K/W

2003 May 13 4

Philips Semiconductors Product speciﬁcation

50 V low VCEsat PNP transistor PBSS5350Z

CHARACTERISTICS

Tamb =25°C unless otherwise speciﬁed.

Note

1. Pulse test: tp≤300 µs; δ≤0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB =−50 V; IE=0 −−−100 nA

VCB =−50 V; IE= 0; Tj= 150 °C−−−50 µA

IEBO emitter-base cut-off current VEB =−5 V; IC=0 −−−100 nA

hFE DC current gain VCE =−2V;

C=−500 mA 200 −−

=−1 A; note 1 200 −−

=−2 A; note 1 100 −−

CEsat collector-emitter saturation

voltage IC=−500 mA; IB=−50 mA −−−100 mV

IC=−1 A; IB=−50 mA −−−180 mV

IC=−2 A; IB=−200 mA; note 1 −−−300 mV

RCEsat equivalent on-resistance IC=−2 A; IB=−200 mA; note 1 −120 <150 mΩ

VBEsat base-emitter saturation

voltage IC=−2 A; IB=−200 mA; note 1 −−−1.2 V

VBEon base-emitter turn-on voltage VCE =−2 V; IC=−1 A; note 1 −−−1.1 V

fTtransition frequency IC=−100 mA; VCE =−5V;

f = 100 MHz 100 −−MHz

Cccollector capacitance VCB =−10 V; IE=I

e= 0; f = 1 MHz −−40 pF

2003 May 13 5

Philips Semiconductors Product speciﬁcation

50 V low VCEsat PNP transistor PBSS5350Z

handbook, halfpage

hFE

IC (mA)

1000

200

400

600

800

MGW167

−10−1−1−10 −102−103−104

(1)

(2)

(3)

Fig.2 DC current gain as a function of collector

current; typical values.

VCE =−2V.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

IC (mA)

VBE

(V)

−1.2

−0.4

−0.8

MGW168

−10−1−1−10 −102−103−104

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

VCE =−2V.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

handbook, halfpage

IC (mA)

−103

−102

−10

−1

MGW169

−10−1−1−10 −102−103−104

VCEsat

(mV)

(1)

(2)

(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 10.

(1) Tamb = 150 °C.

(2) Tamb =25°C.

(3) Tamb =−55 °C.

handbook, halfpage

IC (mA)

−1.4

−0.8

−0.6

−0.4

−0.2

−1.0

−1.2

MGW170

−10

−1

−1−10 −10

−10

VBEsat

(V)

(1)

(2)

(3)

Fig.5 Base-emitter saturation voltage as a

function of collector current; typical values.

IC/IB= 10.

(1) Tamb =−55 °C.

(2) Tamb =25°C.

(3) Tamb = 150 °C.

2003 May 13 6

Philips Semiconductors Product speciﬁcation

50 V low VCEsat PNP transistor PBSS5350Z

handbook, halfpage

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

(11)

(12)

−2

−1000

−200

−400

−600

−800

−0.4 −0.8 −1.2 −1.6

MGW171

VCE (V)

(mA)

Fig.6 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB=−3.96 mA.

(2) IB=−3.63 mA.

(3) IB=−3.30 mA.

(4) IB=−2.97 mA.

(5) IB=−2.64 mA.

(6) IB=−2.31 mA.

(7) IB=−1.98 mA.

(8) IB=−1.65 mA.

(9) IB=−1.32 mA.

(10) IB=−0.99 mA.

(11) IB=−0.66 mA.

(12) IB=−0.33 mA.

Tamb =25°C.

handbook, halfpage

(4)

(5)

(6)

(7)

(8)

(9)

(10)

−2

−5

−1

−2

−3

−4

−0.4 −0.8 −1.2 −1.6

MGW172

VCE (V)

(A)

(1) (2) (3)

Fig.7 Collector current as a function of

collector-emitter voltage; typical values.

(1) IB=−250 mA.

(2) IB=−225 mA.

(3) IB=−200 mA.

(4) IB=−175 mA.

(5) IB=−150 mA.

(6) IB=−125 mA.

(7) IB=−100 mA.

(8) IB=−75 mA.

(9) IB=−50 mA.

(10) IB=−25 mA.

Tamb =25°C.

handbook, halfpage

103

102

10−1

−10−1

MGU390

−1−10 IC (mA)

RCEsat

(Ω)

−102−103−104

(1)

(3)

(2)

Fig.8 Collector-emitter equivalent on-resistance

as a function of collector current; typical

values.

IC/IB= 20.

(1) Tamb = 150 °C. (2) Tamb =25°C. (3) Tamb =−55 °C.

2003 May 13 7

Philips Semiconductors Product speciﬁcation

50 V low VCEsat PNP transistor PBSS5350Z

PACKAGE OUTLINE

UNIT A1bpcDEe

pQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

vMA

0 2 4 mm

scale

132

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

2003 May 13 8

Philips Semiconductors Product speciﬁcation

50 V low VCEsat PNP transistor PBSS5350Z

DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

LEVEL DATA SHEET

STATUS(1) PRODUCT

STATUS(2)(3) DEFINITION

I Objective data Development This data sheet contains data from the objective speciﬁcation for product

development. Philips Semiconductors reserves the right to change the

speciﬁcation in any manner without notice.

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation.

Supplementary data will be published at a later date. Philips

Semiconductors reserves the right to change the speciﬁcation without

notice, in order to improve the design and supply the best possible

product.

III Product data Production This data sheet contains data from the product speciﬁcation. Philips

Semiconductors reserves the right to make changes at any time in order

to improve the design, manufacturing and supply. Relevant changes will

be communicated via a Customer Product/Process Change Notiﬁcation

(CPCN).

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratanyotherconditionsabovethosegiveninthe

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationorwarrantythatsuch applicationswillbe

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorselling theseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes in the products -

including circuits, standard cells, and/or software -

described or contained herein in order to improve design

and/or performance. When the product is in full production

(status ‘Production’), relevant changes will be

communicated via a Customer Product/Process Change

Notification (CPCN). Philips Semiconductors assumes no

responsibility or liability for the use of any of these

products, conveys no licence or title under any patent,

makes no representations or warranties that these

products are free from patent, copyright, or mask work

right infringement, unless otherwise specified.

2003 May 13 9

Philips Semiconductors Product speciﬁcation

50 V low VCEsat PNP transistor PBSS5350Z

NOTES

2003 May 13 10

Philips Semiconductors Product speciﬁcation

50 V low VCEsat PNP transistor PBSS5350Z

NOTES

2003 May 13 11

Philips Semiconductors Product speciﬁcation

50 V low VCEsat PNP transistor PBSS5350Z

NOTES

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Printed in The Netherlands 613514/04/pp12 Date of release: 2003 May 13 Document order number: 9397 750 11058