SPD30N03S2L-07 Preliminary data OptiMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) VDS 30 V RDS(on) 6.7 m ID 30 A P-TO252 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPD30N03S2L-07 P-TO252 Q67042-S4031 2N03L07 Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25C ,1) 30 TC=100C 30 ID puls 120 EAS 250 dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 125 W -55... +175 C Pulsed drain current TC=25C Avalanche energy, single pulse ID =30 A , VDD =25V, RGS =25 Reverse diode dv/dt mJ kV/s IS =30A, VDS =24V, di/dt=200A/s, Tjmax =175C TC=25C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2001-04-05 SPD30N03S2L-07 Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1.2 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm 2 cooling area 2) K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID =85A Zero gate voltage drain current A IDSS VDS =30V, VGS =0V, Tj=25C - 0.01 1 VDS =30V, VGS =0V, Tj=125C - 10 100 IGSS - 1 100 nA RDS(on) - 7.7 9.8 m RDS(on) - 5.6 6.7 Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=30A Drain-source on-state resistance VGS =10V, ID =30A 1Current limited by bondwire; with a RthJC = 1.2 K/W the chip is able to carry I = 91A D and calculated with max. source pin temperature of 85C. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2001-04-05 SPD30N03S2L-07 Preliminary data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 29 58 - S pF Dynamic Characteristics Transconductance gfs VDS 2*ID *RDS(on)max , ID =30A Input capacitance Ciss VGS =0V, VDS =25V, - 1900 2370 Output capacitance Coss f=1MHz - 750 940 Reverse transfer capacitance Crss - 170 250 Gate resistance RG - 2.3 - Turn-on delay time td(on) - 8 10 ns Rise time tr - 34 42.5 Turn-off delay time td(off) - 62 77.5 Fall time tf - 47 59 - 6 8 - 14 21 - 47 59 V(plateau) VDD =24V, ID=30A - 3.1 - V IS - - 30 A - - 120 VDD =15V, VGS=10V, ID =15A, RG =3.6 Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =24V, ID =30A VDD =24V, ID =30A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25C forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =30A - 0.9 1.3 V Reverse recovery time trr VR =15V, IF =lS , - 33 40 ns Reverse recovery charge Qrr diF /dt=100A/s - 32 40 nC Page 3 2001-04-05 SPD30N03S2L-07 Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TC ) ID = f (TC ) 140 parameter: VGS 10 V SPD30N03S2L-07 32 SPD30N03S2L-07 W A 120 110 24 90 ID Ptot 100 20 80 16 70 60 12 50 40 8 30 20 4 10 0 0 20 40 60 80 0 0 100 120 140 160 C 190 20 40 60 80 100 120 140 160 C 190 TC TC 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJC = f (tp ) parameter : D = 0 , TC = 25 C parameter : D = tp /T 10 10 1 3 SPD30N03S2L-07 SPD30N03S2L-07 K/W A /I D 10 0 Z thJC V DS tp = 13.0s R DS ( ID on ) = 10 2 10 -1 100 s D = 0.50 10 10 1 -2 0.20 0.10 1 ms 0.05 10 ms 10 -3 DC 10 0 -1 10 10 0 10 1 single pulse 0.02 0.01 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp VDS Page 4 2001-04-05 SPD30N03S2L-07 Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=25C RDS(on) = f (ID ) parameter: tp = 80 s parameter: VGS A SPD30N03S2L-07 24 Ptot = 125W VGS [V] a 2.6 i h g 60 f ID 55 50 45 e 40 35 30 b 2.8 c 3.0 d 3.2 e 3.4 f 3.6 g 3.8 h 4.5 i 10.0 d 20 e f 18 16 14 g 12 10 d h 8 25 20 6 c 15 4 b 10 5 0 0 SPD30N03S2L-07 RDS(on) 75 2 a 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 i VGS [V] = d 3.2 e f 3.4 3.6 10 g 3.8 20 h i 4.5 10.0 30 40 50 ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 65 ID VDS 7 Typ. transfer characteristics A 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 90 60 A S 50 70 40 g fs ID 45 35 60 50 30 40 25 30 20 15 20 10 10 5 0 0 0.5 1 1.5 2 2.5 3 0 0 4 V VGS Page 5 20 40 60 80 100 A 130 ID 2001-04-05 SPD30N03S2L-07 Preliminary data 9 Drain-source on-state resistance 10 Gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = 30 A, VGS = 10 V parameter: VGS = VDS , ID = 85 A 16 SPD30N03S2L-07 3 V 12 V GS(th) RDS(on) 10 2 max 8 1.5 98% typ typ 6 1 min 4 0.5 2 0 -60 -20 20 60 100 C 140 0 -60 200 -20 20 60 100 Tj C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0V, f=1 MHz parameter: Tj , tp = 80 s 10 4 10 3 SPD30N03S2L-07 A pF Ciss C IF 10 2 Coss 10 3 10 1 Tj = 25 C typ Crss Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD VDS Page 6 2001-04-05 SPD30N03S2L-07 Preliminary data 13 Typ. avalanche energy 14 Typ. gate charge EAS = f (Tj ) VGS = f (QGate ) par.: ID = 30 A , VDD = 25 V, RGS = 25 parameter: ID = 30 A pulsed 260 16 mJ SPD30N03S2L-07 V 220 12 180 VGS E AS 200 160 10 0,2 VDS max 0,8 VDS max 140 8 120 100 6 80 4 60 40 2 20 0 25 45 65 85 105 125 145 C 185 Tj 0 0 10 20 30 40 50 60 nC 75 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 SPD30N03S2L-07 V (BR)DSS V 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C 200 Tj Page 7 2001-04-05 Preliminary data SPD30N03S2L-07 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. 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