T1M5F-A SERIES
MAXIMUM RATINGS
(Tj= 25 unless otherwise noticed)
℃
FEATURES
One-Piece, Injection-Molded Package
Blocking Voltage to 600 Volts
Sensitive Gate Triggering in Four Trigger Modes
(Quadrants) for all possible Combinations of Trigger
Sources, and especially for Circuits that Source Gate
Drives
All Diffused and Glassivated Junctions for Maximum
Uniformity of Parameters and Reliability
Improved Noise Immunity (dv/dt Minimum of 20 V/msec
at 110 )
℃
High Surge Current of 10 Amps
Pb-Free Package
Sensitive Gate Triacs
Sillicon Bidirectional Thyristors
TRIACs
1.0 AMPERES RMS
400 thru 600 VOLTS
Rating Symbol Value Unit
Peak Repetitive Off– State Voltage (
T
J
= -40 to 125
℃
, Sine Wave, 50 to 60 Hz; Gate Open)
V
DRM
,
V
RRM
400
600 Volts
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz (
T
C
= 50
℃
)I
T(RMS)
1.0 Amp
Peak Non-Repetitive Surge Current
Full Cycle Sine Wave 60 Hz (Tj =25
℃
)I
TSM
10.0 Amps
Circuit Fusing Consideration (t = 8.3 ms) I t 0.60 A s
Peak Gate Power ( t 2.0us ,Tc = 80
≦
℃
) P
GM
5.0 Watt
Average Gate Power (
Tc
= 80 , t 8.3 ms )
℃ ≦
P
G(AV)
0.1 Watt
Peak Gate Current ( t 2.0us ,Tc = 80
≦
℃
) I
GM
1.0 Amp
Peak Gate Voltage ( t 2.0us ,Tc = 80
≦
℃
) V
GM
5.0 Volts
Operating Junction Temperature Range
T
J
-40 to +110
℃
Storage Temperature Range Tstg -40 to +150
℃
2 2
REV. 3, Mar-2007, KTXD11
Notice: (1) V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
TO-92 (TO-226AA)
SEATING PLANE
TO-92 (TO-226AA)
All Dimensions in millimeter
TO-92
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
4.45 4.70
5.33
4.32
3.18 4.19
1.39
1.15
2.42 2.66
12.7 ------
2.04 2.66
3.43
-----
I-----
2.93
SEMICONDUCTOR
LITE-ON
T1M5F400A
T1M5F600A
1
2
3
PIN ASSIGNMENT
Main Terminal 1
Main Terminal 2
Gate
RATING AND CHARACTERISTIC CURVES
T1M5F-A SERIES
Characteristic Symbol Value Unit
Thermal Resistance - Junction to Lead
- Junction to Case
- Junction to Ambient
RthJL
RthJC
RthJA
60
75
150
/
℃
W
Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds
T
L
260
℃
Characteristics Symbol Min Typ Max Unit
Peak Reptitive Forward or Reverse Blocking Current T
j
=25
℃
(VD=Rated VDRM and VRRM; Gate OPen) T
j
=110
℃
I
DRM
I
RRM
----
----
----
----
10
100
uA
uA
Peak Forward On-State Voltage
(I
TM=
± 1A Peak @Tp 2.0 ms, Duty Cycle 2%)
≦ ≦
V
TM
---- ---- 1.9 Volts
Gate Trigger Current (Continuous dc)
(V
D
= 12 Vdc; R
L
= 100 Ohms)
I
GT1
I
GT2
I
GT3
I
GT4
----
----
----
----
----
----
----
----
5.0
5.0
5.0
7.0
mA
Holding Current (V
D
= 12 V, Initiating Current = ± 200 mA,
Gate Open) I
H
---- 1.5 10 mA
Turn-On Time (V
D
= Rated VDRM , I
TM
= 1.0 A pk, I
G
= 25 mA) tgt ---- 2 ---- us
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 Vdc; R
L
=100 Ohms)
V
GT1
V
GT2
V
GT3
V
GT4
----
----
----
----
0.66
0.77
0.84
0.88
2.0
2.0
2.0
2.5
Volts
Latching Current (V
D
=12V,I
G
= 10 mA)
I
L1
I
L2
I
L3
I
L4
----
----
----
----
1.6
10.5
1.5
2.5
15
20
15
15
mA
Gate Non-Trigger Voltage (V
D
= 12V, R
L
= 100 Ohms , T
J
=110
℃
) V
GD
0.1 ---- ---- Volts
Critical Rate of Rise of Off-State Voltage
(V
D
=Rated V
DRM
,Exponential Waveform, Gate Open, T
J
=110 )
℃
dv/dt 20 60 ---- V/us
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
(T
c
=25 unless otherwise noted)
℃
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
RATING AND CHARACTERISTIC CURVES
T1M5F-A SERIES
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
IT(RMS),RMS ON-STATE CURRENT (AMPS)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
P(AV), POWER PISSIPATION (WATTS)
Figure 3. Power Dissipation
0 25 50 75 100 125
Ta, AMBIENT TEMPERATURE( )℃
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
IT(RMS), RMS ON-STATE CURRENT(AMPS)
Figure 1. RMS Current Deratiing Versus
Ambient Temperature
0 25 50 75 100 125
Tc, CASE TEMPERATURE( )
℃
0.0
0.2
0.4
0.6
0.8
1.0
1.2
IT(RMS), RMS ON-STATE CURRENT(AMPS)
Figure 2. RMS Current Deratiing Versus
Case Temperature
0.4 0.8 1.2 1.6 2.0 2.4 2.8
VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
0.01
0.1
1
10
ITM, INSTANTANEOUS ON-STATE CURRENT (AMP)
Figure 4. On-State Characteristics
tpy.
max.
1.00E-1 1.00E+0 1.00E+1 1.00E+2 1.00E+3 1.00E+4
t, TIME (ms)
0.01
0.1
1
R(t), TRANSENT THERMAL RESISTANCE (NORMALIZED)
Figure 5. Transient Thermal Response
RATING AND CHARACTERISTIC CURVES
T1M5F-A SERIES
Specifications mentioned in this publication are subject to change without notice.
◎
-50 -25 0 25 50 75 100 12500000000000000000000
Tj, JUNCTION TEMPERATURE ( )
℃
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
ITSM, PEAK SURGE CURRENT (AMPS)
Figure 8. Typical Gate Trigger Voltage Versus
Junction Temperature
Q1
Q4
Q2
Q3
-50 -25 0 25 50 75 100 12500000000000000000000
Tj, JUNCTION TEMPERATURE ( )
℃
0.1
1.0
10.0
100.0
ITSM, PEAK SURGE CURRENT (AMPS)
Figure 7. Typical Gate Trigger Current Versus
Junction Temperature
Q1
Q4
Q2
Q3
-50 -25 0 25 50 75 100 12500000000000000000000
Tj, JUNCTION TEMPERATURE ( )
℃
0.1
1
10
IH, HOLDING CURRENT (mA)
Figure 10. Typical Holding Current Versus
Junction Temperature
MT2 Positive
-50 -25 0 25 50 75 100 12500000000000000000000
Tj, JUNCTION TEMPERATURE ( )
℃
0.1
1
10
100
IL, LATCHING CURRENT (mA)
Figure 9. Typical Latching Current Versus
Junction Temperature
Q1
Q4
Q2
Q3
MT2 Negative
1 10 100
NUMBER OF CYCLES
0
4
8
12
16
ITSM, PEAK SURGE CURRENT (AMPS)
Figure 6. Maximum Allowable Surge Current
CYCLE
T
J
=25
℃
f= 60MHz
