BSP372N
OptiMOS™ Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic Level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTA=25 °C 1.8 A
TA=70 °C 1.5
Pulsed drain current
ID,pulse TA=25 °C 7.2
Avalanche energy, single pulse
EAS ID=1.8 A, RGS=25 W33 mJ
Reverse diode dv/dtdv/dt
ID=1.8 A, VDS=80 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage
VGS ±20 V
Power dissipation1) Ptot TA=25 °C W
Operating and storage temperature
Tj, Tstg -55 ... 150 °C
ESD Class
JESD22-A114 -HBM 0 (<250V)
Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
1.8
PG-SOT223
VDS
100
V
RDS(on),max
VGS=10 V
0.23
W
VGS=4.5 V
0.27
ID
1.8
A
Product Summary
Type
Package
Tape and Reel
Marking
Halogen-Free
Packing
BSP372N
SOT223
H6327: 1000 pcs/ reel
BSP372N
Yes
Non dry
Rev 2.0 page 1 2013-04-03
BSP372N
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance
junction - soldering point
RthJS - - 25 K/W
Thermal resistance
RthJA minimal footprint - - 110
junction - ambient
6 cm2 cooling area1) - - 70
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=250 µA 100 - - V
Gate threshold voltage
VGS(th)
VDS=Vgs V, ID=218 µA
0.8 1.4 1.80
Drain-source leakage current
IDSS
VDS=100 V, VGS=0 V,
Tj=25 °C
- - 0.1
mA
VDS=100 V, VGS=0 V,
Tj=150 °C
- - 10
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V - - 10 nA
Gate-source on-state resistance
RDS(on) VGS=10 V, ID=1.8 A -153 230 mW
VGS=4.5 V, ID=1.7 A -172 270
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=1.5 A
5.1 - S
Values
1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev 2.0 page 2 2013-04-03
BSP372N
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -247 329 pF
Output capacitance
Coss -40 54
Reverse transfer capacitance
Crss -19 28
Turn-on delay time
td(on) -5.1 7.7 ns
Rise time
tr-6.7 10.1
Turn-off delay time
td(off) -47.3 71.0
Fall time
tf-18 27
Gate Charge Characteristics
Gate to source charge
Qgs -0.6 0.9 nC
Gate to drain charge
Qgd -3.0 4.5
Gate charge total
Qg-9.5 14.3
Gate plateau voltage
Vplateau -2.3 - V
Reverse Diode
Diode continous forward current IS- - 1.8 A
Diode pulse current
IS,pulse - - 7.2
Diode forward voltage
VSD
VGS=0 V, IF=1.8 A,
Tj=25 °C
-0.82 1.1 V
Reverse recovery time
trr -38 57 ns
Reverse recovery charge
Qrr -51.5 77.3 nC
VR=50 V, IF=1.8 A,
diF/dt=100 A/µs
TA=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=50 V, VGS=10 V,
ID=1.8 A, RG,ext=6 W
VDD=50 V, ID=1.8 A,
VGS=0 to 10 V
Rev 2.0 page 3 2013-04-03
BSP372N
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-4
10-3
10-2
10-1
100
101
102
100
101
102
ZthJA [K/W]
tp [s]
0
0.5
1
1.5
2
0 40 80 120 160
Ptot [W]
TA [°C]
0
0.5
1
1.5
2
0 40 80 120 160
ID [A]
TA [°C]
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
103
10-3
10-2
10-1
100
101
ID [A]
VDS [V]
Rev 2.0 page 4 2013-04-03
BSP372N
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
0
1
2
3
4
5
6
7
8
9
10
0 1 2 3 4 5 6 7
gfs [S]
ID [A]
25 °C
150 °C
0
1
2
3
4
5
6
7
0 1 2 3 4
ID [A]
VGS [V]
2.5 V
3 V
4 V
10 V
0
100
200
300
400
500
600
700
800
0 1 2 3 4 5 6 7
RDS(on) [mW]
ID [A]
2 V
2.5 V
2.8 V
3 V
5 V
10 V
0
1
2
3
4
5
6
7
0 2 4 6
ID [A]
VDS [V]
Rev 2.0 page 5 2013-04-03
BSP372N
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=1.8 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=218 µA
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
max
0
100
200
300
400
500
600
-60 -40 -20 0 20 40 60 80 100 120 140 160
RDS(on) [mW]
Tj [°C]
0
0.5
1
1.5
2
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
100
101
102
103
0 10 20 30 40 50 60 70 80 90 100
C [pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-2
10-1
100
101
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
IF [A]
VSD [V]
typ
max
min
Rev 2.0 page 6 2013-04-03
BSP372N
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=1.8 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=250 µA
80
84
88
92
96
100
104
108
112
116
120
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
20 V
50 V
80 V
0
1
2
3
4
5
6
7
8
9
10
0 1 2 3 4 5 6 7 8 9 10
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100
101
102
103
10-1
100
101
IAV [A]
tAV [µs]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
Rev 2.0 page 7 2013-04-03
BSP372N
SOT223
Package Outline:
Footprint: Packaging:
Dimensions in mm
Rev 2.0 page 8 2013-04-03
BSP372N
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev 2.0 page 9 2013-04-03
